| Application Number: | 200710022841.2 | Application date: | 2007.05.24 |
| name: | Sunlight control low radiation, ultraviolet cutoff, photocatalytic sterilization multifunctional coated glass and preparation method thereof | ||
| Public (announcement) number: | CN101054268 | Public (announcement) day: | 2007.10.17 |
| Main classification number: | C03C17/34(2006.01)I | The original application number of the division: | |
| Classification number: | C03C17/34(2006.01)I; C03C17/22(2006.01)I; C03C4/00(2006.01) I; C03C4/08(2006.01)I; C23C14/06(2006.01)I; C23C14/35(2006.01)I | ||
| Award day: | priority: | ||
| Application (patent) person: | Lu Xiuqiang | ||
| address: | No. 102, Zhujiang Road, East District, Economic Development Zone, Suqian City, Jiangsu Province, China | ||
| Invention (design) person: | Lu Xiuqiang | International application: | |
| International announcement: | Enter country date: | ||
| Patent agency: | Huai'an Kewen Intellectual Property Office | agent: | Xie Guansu |
The invention discloses a sunlight-controlled low-radiation, ultraviolet-cutting, photocatalytic sterilizing multifunctional coated glass and a preparation method thereof, and the film structure of the coated glass is sequentially outward from the substrate glass: glass, sunlight-controlled infrared reflective film layer, ultraviolet cut-off The film layer, the photocatalytic bactericidal film layer (the ultraviolet cut film layer, the sunlight control infrared ray reflection film layer order may be interchanged); wherein the chemical composition of the sunlight control infrared ray reflection film layer is: transparent wide band gap semiconductor oxide: In2O3: Sn film, SnO2: Sb film or ZnO: Al film; the chemical composition of the ultraviolet cut-off film layer is: a composite of titanium oxide and cerium oxide; the chemical composition of the photocatalytic sterilizing film layer is: anatase structure titanium dioxide. The preparation method is as follows: firstly, the glass substrate is washed, dried, and then subjected to a pre-vacuum transition; then the target is prepared; and then the film layer is formed by magnetron sputtering.
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